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Accurately assessing cell viability and morphological properties within 3D bioprinted hydrogel scaffolds is essential for tissue engineering but remains challenging due to the limitations of existing invasive and threshold-based methods. We present a computational toolbox that automates cell viability analysis and quantifies key properties such as elongation, flatness, and surface roughness. This framework integrates optical coherence tomography (OCT) with deep learning-based segmentation, achieving a mean segmentation precision of 88.96%. By leveraging OCT’s high-resolution imaging with deep learning-based segmentation, our novel approach enables non-invasive, quantitative analysis, which can advance rapid monitoring of 3D cell cultures for regenerative medicine and biomaterial research. 

The efficient production of green hydrogen via electrochemical water splitting is important for improving the sustainability and enabling the electrification of the chemical industry. One of the major goals of water electrolysis is to utilize non-precious metal catalysts, which can be accomplished with alkaline electrolyzer technologies. However, there is a continuing need for designing catalysts that can operate in alkaline environments with high efficiencies under high current densities. Here we describe a simple, aqueous-based synthesis method to incorporate sulfur into NiFe-based electrocatalysts for the oxygen evolution reaction (OER). Sulfur incorporation was able to reduce the overpotential for the OER from ca. 350 mV on a NiFe catalyst to ca. 290 mV on the NiFeS catalyst at 100 mA cm −2 on a flat supporting electrode. Electrochemical impedance spectroscopy data showed a small decrease in the charge transfer resistance of the NiFeS catalysts, showing that sulfur incorporation may improve the electronic conductivity. Surface-interrogation scanning electrochemical microscopy (SI-SECM) studies combined with Tafel slope analysis suggested that the NiFeS catalyst was able to have vacant surface sites available under OER conditions and was able to maintain a Tafel slope of 39 mV dec −1 . This is in contrast to the NiFe catalyst, for which the SI-SECM studies showed a saturated surface under OER conditions with the Tafel slope transitioning from 39 mV dec −1 to 118 mV dec −1 . The low Tafel slope enabled the NiFeS catalyst to maintain low overpotentials under high current densities, which we attribute to the ability of the NiFeS catalyst to maintain vacant sites during the OER. 

Quantum dots (QDs) offer several advantages in optoelectronics such as easy solution processing, strong light absorption and size tunable direct bandgap. However, their major limitation is their poor film mobility and short diffusion length (<250 nm). This has restricted the thickness of QD film to ∼200–300 nm due to the restriction that the diffusion length imposes on film thickness in order to keep efficient charge collection. Such thin films result in a significant decrease in quantum efficiency for λ > 700 nm in QDs photodetector and photovoltaic devices, causing a reduced photoresponsivity and a poor absorption towards the near-infrared part of the sunlight spectrum. Herein, we demonstrate 1 μm thick QDs photodetectors with intercalated graphene charge collectors that avoid the significant drop of quantum efficiency towards λ > 700 nm observed in most QD optoelectronic devices. The 1 μm thick intercalated QD films ensure strong light absorption while keeping efficient charge extraction with a quantum efficiency of 90%–70% from λ = 600 nm to 950 nm using intercalated graphene layers as charge collectors with interspacing distance of 100 nm. We demonstrate that the effect of graphene on light absorption is minimal. We achieve a time-modulation response of <1 s. We demonstrate that this technology can be implemented on flexible PET substrates, showing 70% of the original performance after 1000 times bending test. This system provides a novel approach towards high-performance photodetection and high conversion photovoltaic efficiency with quantum dots and on flexible substrates. 

Abstract Memristors enter a critical developmental stage where emerging large‐scale integration methods face major challenges with severe switching instabilities in the oxide layer. Here, the superior uniformity is achieved within HfO₂films by embedding highly ordered metal nanoisland (NI) arrays. Embedded films exhibit a significant reduction in both SET and RESET while displaying enhanced uniformity in operating voltages and resistance states. This behavior is attributed to the concentration of electric fields along Pt and Ti NIs and their interactions with the surrounding oxide film matrix environment, which induce separate and distinct filamentary formation mechanisms that affect the stability. A method is reported to further optimize the uniformity of the SET voltage by translating the NI array position down the film‐thickness dimension towards the bottom electrode. A comparison of the density and distribution of the oxygen vacancies responsible for the formation/dissolution of conducting filaments is made via combined electrostatic force microscopy and conductive atomic force microscopy (c‐AFM) studies. Finally, complete observation of the morphological evolution of conducting filaments produced by Pt and Ti is enabled by 3D c‐AFM nanotomography and cross‐sectional scanning transmission electron microscopy–energy dispersive spectroscopy to provide direct correlations between NI‐oxide interactions and overall switching performance. 

Abstract Hybrid graphene (Gr)–quantum dot (QD) photodetectors have shown ultrahigh photoresponsivity combining the strong light absorption of QDs with the high mobility of Gr. QDs absorb light and generate photocarriers that are efficiently transported by Gr. Typically, hybrid PbS–QD/graphene photodetectors operate by transferring photogenerated holes from the QDs to Gr while photoelectrons stay in the QDs inducing a photogating mechanism that achieves a responsivity of 6 × 10⁷A W⁻¹. However, despite such high gain, these systems have poor charge collection with quantum efficiency below 25%. Herein, a ZnO intermediate layer (PbS‐QD/ZnO/Gr) is introduced to improve charge collection by forming an effective p‐n PbS‐ZnO junction driving the electrons to the ZnO layer and then to Gr. This improves the photoresponsivity of the devices by nearly an order of magnitude with respect to devices without ZnO. Charge transfer to Gr is demonstrated by monitoring the change in Fermi level under illumination for conventional PbS‐QD/Gr and for ZnO intermediate PbS‐QD/ZnO/Gr devices. These results improve the capabilities of hybrid QD/Gr configurations for optoelectronic devices.